Publisher's Synopsis
An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p.sup.+ contact region of each of the outermost peripheral cells is less than the surface area of an p.sup.+ contact region of each of the inner cells, for example, so that a unit total resistance of p.sup.+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p.sup.+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.
