Publisher's Synopsis
Proceedings of a symposium held at the Fall Meeting of the MRS in Boston, November-December 1992. The volume is divided into nine sections: III-V epitaxy and characterization; strained and relaxed structures; III-V devices; III-V heteroepitaxy and devices; Si-Ge epitaxy and devices; porous Si; II-VI and IV-VI epitaxy and devices; metal semiconducto