Publisher's Synopsis
This book investigates the electronic properties of QDs of non-linear optical, III-V, II-IV, n-GaP, n-Ge, Te, Graphite, PtSb2, zero gap, II-V, GaSb, stressed materials, Bi, IV-IV, Lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony, III-V,II-VI,IV-VI compounds, III-V,II-VI,IV-VI, HgTe/CdTe and strained layer Quantum Dot Superlattices (QDSL) with graded interfaces and the QD effective mass superlattices of the aforementioned materials together with their heavily doped counter parts on the basis of newly formulated electron dispersion laws. The book considers the structures in which a layer of QD is inserted in the QW (Dots-in-Well) in the base and examines theoretically if there is improvement in the performance over the usual QW structure.
