Publisher's Synopsis
The majority of the papers presented here deal with the topic of SiC and reflect the progress made in recent years concerning the material quality of SiC. Other papers deal with the problems of the technology of GaAs and the material growth and investigation of GaN. The silicon related papers present complete circuits as well as new technologies. Some papers deal with the modelling of devices at increased temperatures. New results on crystalline and polycrystalline diamond are presented in six papers and the problem of material growth is also addressed here. The final papers deal with materials concerning thermoelectric power conversion and demonstrate the importance of high temperature electronics.
