Publisher's Synopsis
This monograph is the first one in the scientific literature treating the problem of formation of interstitial atom clusters in Si and Ge crystals. The experimental results obtained by means of high resolution and high voltage electron microscopy on atomic (113) - defects are presented. The role of the interaction between interstitials and vacancy complexes is shown in the process of formation of extended defects such as prismatic dislocation loops. The conditions of disappearance of interstitial clusters under the electron irradiation have been determined.;The analysis of interactions of interstitials with vacancies, (113)-defects, dislocations, impurity atoms, and crystal surfaces has been carried out in terms of the theory of line rates of quasichemical reactions between point defects and sinks.
